SST12LN01 Datasheet, PDF (1/12 Pages) Silicon Storage Technology, Inc – 2.4-2.5 GHz Low-Noise Amplifier

SST12LN01
2.4-2.5 GHz WLAN Low-Noise Amplifier
Features
• Gain:
– Typically 13.5 dB gain across 2.4–2.5 GHz
• Noise Figure:
– Typically 1.5 dB across 2.4–2.5 GHz
• P1dB:
– Typically -5dBm with V_DD 3.3V
• Low-Current Consumption
– 10 mA across 2.4–2.5 GHz
• 50 Input/Output Matched
• Packages available
– 6-contact UQFN – 3 mm x 1.6 mm
• All non-Pb (lead-free) devices are RoHS
compliant
Applications
• WLAN
• Bluetooth
• Wireless Network
1.0 PRODUCT DESCRIPTION
SST12LN01 is a cost effective Low-Noise Amplifier
(LNA) which requires no external RF-matching compo-
nents. This device is based on the GaAs pHEMT tech-
nology, and complies with 802.11 b/g applications.
SST12LN01 provides high-performance, low-noise,
and moderate-gain operation within the 2.4–2.5 GHz
frequency band. Across this frequency band, the LNA
typically provides 13.5 dB gain and 1.5 dB noise figure.
This LNA cell is designed with a self DC-biasing
scheme, which maintains low DC current consumption,
nominally at 10 mA, during operation. Optimum perfor-
mance is achieved with only a single power supply, and
no external bias resistors or networks are required. The
input and output ports are single-ended 50 matched.
RF ports are also DC isolated requiring no DC blocking
capacitors or matching components.
SST12LN01 is offered in a 6-contact UQFN package.
See Figure 3-1 for pin assignments and Table 4-1 for
pin descriptions.
 2015 Microchip Technology Inc.
DS70005150A-page 1