SST12LF09_13 Datasheet, PDF (1/18 Pages) Microchip Technology – 2.4 GHz High-Linearity, WLAN Front-End Module

SST12LF09
2.4 GHz High-Linearity, WLAN Front-End Module
FEATURES
• Input/output ports internally matched to 50 and
DC decoupled
• Package available
- 16-contact X2QFN – 2.5mm x 2.5mmx 0.4mm
• All non-Pb (lead-free) devices are RoHS compliant
Transmitter Chain
• Gain:
- Typically 24 dB gain
• Dynamic linear output power:
- Meets 802.11g OFDM ACPR requirement up to
21 dBm using 3.6V V_CC and 22.5 dBm using
5V V_CC
- 17 dBm using 3.6V, 18 dBm using 5.0V, at 3%
EVM for 802.11g, 54 Mbps
- 15 dBm using 3.6V, 16 dBm using 5.0V, at
1.75% dynamic EVM for 256 QAM, 40 MHz
bandwidth
• Operating current
- 150 mA @ P_OUT = 17 dBm for 802.11g, 3.6V
- 130 mA @ P_OUT = 15 dBm for MCS9, 3.6V
• PA Control current, I_PEN:<3 mA
• Idle current, I_CQ:90 mA (3.6V V_CC)
• Low shut-down current: ~2 μA
• Power-up/down control
- Turn on/off time (10%–90%) <400 ns
• Limited variation over temperature
- ~1 dB power variation between -40°C to +85°C
• Linear on-chip power detection
- Load and temperature insensitive
- >20 dB dynamic range on-chip power detection
Receiver Chain
• Gain: Typically 12 dB gain
• Noise figure: Typically 2.5 dB
• Receiver input P1dB: Typically -6 dBm
• LNA bypass loss: Typically 9 dB
Bluetooth^® Chain
• Loss: 1.6dB
• Output P1dB: >25 dBm
APPLICATIONS
• WLAN (IEEE 802.11b/g/n/256 QAM)
• Home RF
• Cordless phones
• 2.4 GHz ISM wireless equipment
1.0 PRODUCT DESCRIPTION
SST12LF09 is a 2.4 GHz Front-end Module (FEM)
designed in compliance with IEEE 802.11b/g/n and
256 QAM applications. Based on GaAs pHEMT/HBT
technology, it combines a high-performance transmitter
power amplifier (PA), a low-noise receiver amplifier
(LNA) and an antenna Tx/Rx/BT switch (SP3T SW).
The input/output RF ports are single-ended and inter-
nally matched to 50 . These RF ports are DC decou-
pled, and require no DC-blocking capacitors or
matching components. This helps reduce the system
board Bill of Materials (BOM) cost.
There are two components to the FEM: the Transmitter
(TX) chain and the Receiver (RX) chain.
The TX chain includes a high-efficiency PA based on
the InGaP/GaAs HBT technology. The transmitter is
optimized for high linearity, 802.11n and 256 QAM
operation–typically providing 15 dBm with 1.75%
dynamic EVM for 256 QAM, 40 MHz operation and 17
dBm at 3% for 802.11g, 54 Mbps operation at 3.6V. At
5V V_CC, the transmitter provides typically 17 dBm with
1.75% dynamic EVM for 256 QAM, 40 MHz operation
and 18 dBm at 3% for 802.11g, 54 Mbps operation.
SST12LF09 has a transmitter on-chip, single-ended
power detector that is stable over temperature and
insensitive to output VSWR. It features a wide
dynamic-range (20 dB) with dB-wise linear operation.
The on-chip power detector provides a reliable solution
to board-level power control.
The Rx chain provides typically 12 dB gain with 2.5 dB
noise figure. With the LNA bypassed, the receiver loss
is typically 9 dB.
SST12LF09 is offered in a 16-contact X2QFN package.
See Figure 3-1 for pin assignments and Table 4-1 for
pin descriptions.
 2013 Microchip Technology Inc.
DS75083B-page 1