SST12LF09 Datasheet, PDF (1/15 Pages) Microchip Technology – 2.4 GHz High-Gain, High-Efficiency Front-end Module

SST12LF09
2.4 GHz High-Gain, High-Efficiency Front-end Module
FEATURES
• Input/output ports internally matched to 50Ω and
DC decoupled
• Package available
- 16-contact XQFN – 2.5mm x 2.5mmx 0.4mm
• All non-Pb (lead-free) devices are RoHS compliant
Transmitter Chain
• Gain:
- Typically 24 dB gain
• Dynamic linear output power:
- Meets 802.11g OFDM ACPR requirement up to
21 dBm
- 3% EVM up to 17 dBm for 802.11g, 54 Mbps
- 1.75% dynamic EVM up to 15 dBm for 256 QAM,
40 MHz bandwidth
• Operating current for 802.11g/n applications
- 170mA @ P_OUT = 17 dBm for 802.11g
- 130 mA @ P_OUT = 15 dBm for 802.11n
• PA Control current, I_PEN:<2mA
• Idle current, I_CQ:105mA
• Low shut-down current: ~2 µA
• Power-up/down control
- Turn on/off time (10%–90%) <400 ns
• Limited variation over temperature
- ~1 dB gain/power variation between -40°C to +85°C
• Linear on-chip power detection
- Load and temperature insensitive
- >20 dB dynamic range on-chip power detection
Receiver Chain
• Gain: Typically 13 dB gain
• Noise figure: Typically 2.5 dB
• Receiver input P1dB: Typically -6 dBm
• LNA bypass loss: Typically 9 dB
Bluetooth^® Chain
• Loss: 1.0 dB
• Output P1dB: >25 dBm
APPLICATIONS
• WLAN (IEEE 802.11b/g/n)
• Home RF
• Cordless phones
• 2.4 GHz ISM wireless equipment
1.0 PRODUCT DESCRIPTION
SST12LF09 is a 2.4 GHz Front-end Module (FEM)
designed in compliance with IEEE 802.11b/g/n applica-
tions. Based on GaAs pHEMT/HBT technology, it com-
bines a high-performance Power Amplifier (PA), a low-
noise amplifier (LNA) and an antenna Tx/Rx switch
(SW). The input/output RF ports are single-ended and
internally matched to 50 Ω. These RF ports are DC
decoupled, and require no DC-blocking capacitors or
matching components. This helps reduce the system
board Bill of Materials (BOM) cost.
There are two components to the FEM: the Transmitter
(TX) chain and the Receiver (RX) chain.
The TX chain includes a high-efficiency PA based on
the InGaP/GaAs HBT technology. The transmitter is
optimized for high linearity, 802.11n and 256 QAM
operation–typically providing 15 dBm with 1.75%
dynamic EVM for 256 QAM, 40 MHz operation and 17
dBm at 3% for 802.11g, 54 Mbps operation.
SST12LF09 has an excellent transmitter on-chip, sin-
gle-ended power detector that is stable over tempera-
ture and insensitive to output VSWR. It features a wide
dynamic-range (20 dB) with dB-wise linear operation.
The on-chip power detector provides a reliable solution
to board-level power control.
The Rx chain provides typically 13 dB gain with 2.5 dB
noise figure. With the LNA bypassed, the receiver loss
is typically 9 dB. SST12LF09 also features a Blue-
tooth^® path with typically 1.0 dB loss.
SST12LF09 is offered in a16-contact X2QFN package.
See Figure 3-1 for pin assignments and Table 4-1 for
pin descriptions.
 2013 Microchip Technology Inc.
DS75083A-page 1