SST11LF04 Datasheet, PDF (1/18 Pages) Microchip Technology – 4.9-5.9 GHz High-Linearity, High-Efficiency Front-end Module

SST11LF04
4.9-5.9 GHz High-Linearity, High-Efficiency Front-end Module
FEATURES
• Input/output ports internally matched to 50 and
DC decoupled
• Package available
- 16-contact X2QFN – 2.5mm x 2.5mm x 0.4mm (max)
• Devices are RoHS compliant
Transmitter Chain
• Operating voltage 3.0V to 5.0V
• Gain:
- Typically 30 dB gain across 4.9-5.9 GHz at 3.3V
• Typical linear output power at 3.3V:
- Meets 802.11a OFDM ACPR requirement up to
21 dBm
- Meets 802.11ac spectrum mask requirement up
to 20 dBm
- 3.0% dynamic EVM up to 18 dBm for 802.11a,
54 Mbps
- 1.75% dynamic EVM up to 16 dBm for 802.11ac,
MCS9, 80 MHz
• Operating current for 802.11a/n/ac applications
- 270 mA @ P_OUT = 18 dBm for 802.11a at 3.3V
• I_PEN: 6 mA
• Idle current: 210 mA I_CQ
• Low shut-down current: ~2 µA
• High-speed power-up/down
- Turn on/off time (10%–90%) <400 ns
• Limited variation over temperature
- ~1 dB gain/power variation between -40°C to +85°C
• Excellent on-chip power detection
- Load and temperature insensitive
- >20 dB dynamic range on-chip power detection
Receiver Chain
• Gain:
- Typically 12 dB gain across 4.9-5.9 GHz
• Noise figure
- Typically 2.95 dB across 4.9-5.9 GHz
• LNA bypass loss
- Typically 8 dB
Applications
• WLAN–IEEE 802.11a/n/ac
• WAVE(IEEE 802.11p)
• Home RF
• Cordless phones
• 5 GHz ISM wireless equipment
PRODUCT DESCRIPTION
SST11LF04 is a 4.9-5.9 GHz Front-end Module (FEM)
designed in compliance with IEEE 802.11a/n/p/ac
applications. Based on GaAs pHEMT/HBT technology,
it combines a high-performance Power Amplifier (PA),
a low-noise amplifier (LNA) and an antenna Tx/Rx
switch (SW). The input/output RF ports are single-
ended and internally matched to 50 . These RF ports
are DC decoupled, and require no external DC-block-
ing capacitors or matching components. This helps
reduce the system board Bill of Materials (BOM) cost.
There are two functional components to the FEM: the
Transmitter (TX) chain and the Receiver (RX) chain.
The TX chain includes a high-efficiency PA based on
the InGaP/GaAs HBT technology. At 3.3V, the transmit-
ter typically provides 30 dB gain and provides 802.11a
spectrum mask compliance at 21 dBm. The TX chain
has excellent linearity, typically 3% dynamic EVM at
18 dBm output power, with 802.11a, 54 Mbps operation
and requires only 270 mA DC current. It also provides
up to 16 dBm output power with 1.75% dynamic EVM
using 802.11ac MCS9, 80 MHz modulation.
SST11LF04 transmitter features a high-speed power-
up/-down control with low current (total I_PEN ~6 mA).
SST11LF04 has an excellent on-chip, single-ended
power detector that is stable over temperature and
insensitive to output VSWR. This detector features a
wide dynamic-range (20 dB) with dB-wise linear opera-
tion, thus providing a reliable solution to board-level
power control.
The Rx chain provides typically 12 dB gain with 2.95 dB
noise figure. With the LNA bypassed, the receiver loss
is typically 8 dB with P1dB>20 dBm.
SST11LF04 is offered in a16-contact X2QFN package.
See Figure 2-1 for pin assignments and Table 2-1 for
pin descriptions.
 2014 Microchip Technology Inc.
DS70005081B-page 1