RE46C127 Datasheet, PDF (1/10 Pages) Microchip Technology – CMOS Ionization Smoke Detector ASIC with Interconnect and Timer Mode

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RE46C127
CMOS Ionization Smoke Detector ASIC with Interconnect and Timer Mode
Product Specification
General Description
The RE46C127 is low power CMOS ionization type
smoke detector IC. With few external components this
circuit will provide all the required features for an
ionization type smoke detector.
An internal oscillator strobes power to the smoke
detection circuitry for 10.5mS every 1.66 seconds to
keep standby current to a minimum. A check for a low
battery condition is performed every 40 seconds when
in standby. A 2/3 duty cycle continuous horn pattern is
used for the alarm condition.
An interconnect pin allows multiple detectors to be
connected such that when one units alarms all units will
sound.
An internal 8 minute timer allows for a separate button
to be used for reduced sensitivity mode.
Although this device was designed for smoke detection
utilizing an ionization chamber it could be used in a
variety of security applications.
Utilizing low power CMOS technology the RE46C127
was designed for use in smoke detectors that comply
with Underwriters Laboratory Specification UL217 and
UL268.
Features
• Guard Outputs for Ion Detector Input
• +/-0.75pA Detect Input Current
• Internal Reverse Battery Protection
• Low Quiescent Current Consumption (<6.5uA)
• Available in 16L PDIP or 16L N SOIC
• ESD Protection on all Pins
• Internal Low Battery Detection
• Interconnect up to 40 Detectors
• 8 Minute Timer for Sensitivity Control
• Compatible with Allegro A5348
• Available in Standard Packaging or RoHS Compliant
Pb Free Packaging.
Pin Configuration
TSTART
1
IO
2
LBADJ
3
TSTROBE
4
LED
5
VDD 6
RBIAS
7
FEED 8
16 ^GUARD2
15 ^DETECT
14 ^GUARD1
13 ^VSEN
12 ^OSCAP
11 ^HS
10 ^HB
9 ^VSS
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Supply Voltage
Input Voltage Range Except FEED, IO
FEED Input Voltage Range
IO Input Voltage Range
Reverse Battery Time
Input Current except FEED
Operating Temperature
Storage Temperature
Maximum Junction Temperature
SYMBOL
V_DD
V_in
V_infd
V_io1
T_RB
I_in
T_A
T_STG
T_J
VALUE
15
-.3 to V_dd +.3
-10 to +22
-.3 to 17
5
10
-10 to 60
-55 to 125
150
UNITS
V
V
V
V
S
mA
°C
°C
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only and operation at these conditions for extended periods may affect device reliability.
This product utilizes CMOS technology with static protection; however proper ESD prevention procedures should be used when
handling this product. Damage can occur when exposed to extremely high static electrical charge.
© 2009 Microchip Technology Inc.
DS22174A-page 1