MCP87090 Datasheet, PDF (1/18 Pages) Microchip Technology – High-Speed N-Channel Power MOSFET

MCP87090
High-Speed N-Channel Power MOSFET
Features:
• Low Drain-to-Source On Resistance (R_DS(ON))
• Low Total Gate Charge (Q_G) and Gate-to-Drain
Charge (Q_GD)
• Low Series Gate Resistance (R_G)
• Capable of Short Dead-Time Operation
• RoHS Compliant
Applications:
• Point-of-Load DC-DC Converters
• High Efficiency Power Management in Servers,
Networking, and Automotive Applications
Description:
The MCP87090 is an N-Channel power MOSFET in a
popular PDFN 5 mm x 6 mm package, as well as a
PDFN 3.3 mm x 3.3 mm package. Advanced
packaging and silicon processing technologies allow
the MCP87090 to achieve a low Q_G for a given R_DS(ON)
value, resulting in a low Figure of Merit (FOM).
Combined with low R_G, the low FOM of the MCP87090
device allows high efficiency power conversion with
reduced switching and conduction losses.
Package Type
PDFN 5 x 6
PDFN 3.3 x 3.3
S1
8D
S2
7D
S3
6D
G4
5D
Product Summary Table: Unless otherwise indicated, T_A = +25˚C
Parameters
Sym Min Typ Max Units
Conditions
Operating Characteristics
Drain-to-Source Breakdown Voltage
Gate-to-Source Threshold Voltage
Drain-to-Source On Resistance
Total Gate Charge
Gate-to-Drain Charge
Series Gate Resistance
BV_DSS 25 — —
V_GS(TH) 1.1 1.35 1.7
R_DS(ON) —
—
10 12
8.5 10.5
Q_G
— 7.5 10
Q_GD
— 2.8 —
R_G
— 1.8 —
V V_GS = 0V, I_D = 250 µA
V V_DS = V_GS, I_D = 250 µA
mΩ V_GS = 4.5V, I_D = 17A
mΩ V_GS = 10V, I_D = 17A
nC V_DS = 12.5V, I_D = 17A, V_GS = 4.5V
nC V_DS = 12.5V, I_D = 17A
Ω
Thermal Characteristics
Thermal Resistance Junction-to-X, 8L 3.3x3.3-PDFN
R_θJX
— — 66 °C/W Note 1
Thermal Resistance Junction-to-Case, 8L 3.3x3.3-PDFN R_θJC — — 3.5 °C/W Note 2
Thermal Resistance Junction-to-X, 8L 5x6-PDFN
R_θJX
— — 56 °C/W Note 1
Thermal Resistance Junction-to-Case, 8L 5x6-PDFN
R_θJC
— — 2.0 °C/W Note 2
Note 1: R_θJX is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1” x 1” mounting pad of 2 oz. copper.
This characteristic is dependent on user’s board design.
2: R_θJC is determined using JEDEC 51-14 Method. This characteristic is determined by design.
 2013 Microchip Technology Inc.
DS22332A-page 1