MCP87050_12 Datasheet, PDF (1/16 Pages) Microchip Technology – High-Speed N-Channel Power MOSFET

MCP87050
High-Speed N-Channel Power MOSFET
Features:
• Low Drain-to-Source On Resistance (R_DS(ON))
• Low Total Gate Charge (Q_G) and Gate-to-Drain
Charge (Q_GD)
• Low Series Gate Resistance (R_G)
• Fast Switching
• Capable of Short Dead-Time Operation
• RoHS Compliant
Applications
• Point-of-Load DC-DC Converters
• High Efficiency Power Management in Servers,
Networking, and Automotive Applications
Package Type
PDFN 5 x 6
Description
The MCP87050 is an N-Channel power MOSFET in a
popular PDFN 5 mm x 6 mm package. Advanced
packaging and silicon processing technologies allow
the MCP87050 to achieve a low Q_G for a given R_DS(ON)
value, resulting in a low Figure of Merit (FOM).
Combined with low R_G, the low Figure of Merit of the
MCP87050 allows high efficiency power conversion
with reduced switching and conduction losses.
S1
8D
S2
7D
S3
6D
G4
5D
Product Summary Table: Unless otherwise indicated, T_A = +25˚C
Parameters
Sym Min Typ Max Units
Conditions
Operating Characteristics
Drain-to-Source Breakdown Voltage
Gate-to-Source Threshold Voltage
Drain-to-Source On Resistance
Total Gate Charge
Gate-to-Drain Charge
Series Gate Resistance
BV_DSS 25 — —
V_GS(TH) 1 1.3 1.6
R_DS(ON) — 5.0 6.0
— 4.2 5.0
Q_G
— 12.5 15
Q_GD — 4.7 —
R_G
— 1.1 —
V V_GS = 0V, I_D = 250 µA
V V_DS = V_GS, I_D = 250 µA
mΩ V_GS = 4.5V, I_D = 20A
mΩ V_GS = 10V, I_D = 20A
nC V_DS = 12.5V, I_D = 20A, V_GS = 4.5V
nC V_DS = 12.5V, I_D = 20A
Ω
Thermal Characteristics
Thermal Resistance Junction-to-X
R_θJX — — 56 ˚C/W Note 1
Thermal Resistance Junction-to-Case
R_θJC — — 1.9 ˚C/W Note 2
Note 1:
2:
R_θJX is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1” x 1” mounting pad of
2 oz. copper. This characteristic is dependent on user’s board design.
R_θJC is determined using JEDEC 51-14 Method. This characteristic is determined by design.
 2012 Microchip Technology Inc.
DS22308B-page 1