MCP87022_12 Datasheet, PDF (1/16 Pages) Microchip Technology – High-Speed N-Channel Power MOSFET

MCP87022
High-Speed N-Channel Power MOSFET
Features:
• Low Drain-to-Source On Resistance (R_DS(ON))
• Low Total Gate Charge (Q_G) and Gate-to-Drain
Charge (Q_GD)
• Low Series Gate Resistance (R_G)
• Fast Switching
• Capable of Short Dead-Time Operation
• ROHS Compliant
Applications
• Point-of-Load DC-DC Converters
• High Efficiency Power Management in Servers,
Networking and Automotive Applications
Package Type
PDFN 5 x 6
Description
The MCP87022 is an N-Channel power MOSFET in a
popular PDFN 5 mm x 6 mm package. Advanced
packaging and silicon processing technologies allow
the MCP87022 to achieve a low Q_G for a given R_DS(on)
value, resulting in a low Figure of Merit (FOM).
Combined with low R_G, the low Figure of Merit of the
MCP87022 allows high efficiency power conversion
with reduced switching and conduction losses.
S1
8D
S2
7D
S3
6D
G4
5D
Product Summary Table: Unless otherwise indicated, T_A = +25˚C
Parameters
Sym Min Typ Max Units
Conditions
Operating Characteristics
Drain-to-Source Breakdown Voltage
BV_DSS
25
—
—
V V_GS = 0V, I_D = 250 µA
Gate-to-Source Threshold Voltage
Drain-to-Source On Resistance
Total Gate Charge
V_GS(TH)
1
1.3 1.6
R_DS(ON) —
—
2.2 2.6
1.9 2.3
Q_G
— 25.5 29
V V_DS = V_GS, I_D = 250 µA
mΩ V_GS = 4.5V, I_D = 25A
mΩ V_GS = 10V, I_D = 25A
nC V_DS = 12.5V, I_D = 25A, V_GS = 4.5V
Gate-to-Drain Charge
Q_GD
—
9
—
nC V_DS = 12.5V, I_D = 25A
Series Gate Resistance
R_G
— 1.3 —
Ω—
Thermal Characteristics
Thermal Resistance Junction-to-X
R_θJX
— — 56 ˚C/W Note 1
Thermal Resistance Junction-to-Case
R_θJC
— — 1.6 ˚C/W Note 2
Note 1: R_θJX is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1” x 1” mounting pad of
2 oz. copper. This characteristic is dependent on user’s board design.
2: R_θJC is determined using JEDEC 51-14 Method. This characteristic is determined by design.
 2012 Microchip Technology Inc.
DS25133B-page 1