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MCP87018_13 Datasheet, PDF (1/16 Pages) Microchip Technology – High-Speed N-Channel Power MOSFET | |||
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MCP87018
High-Speed N-Channel Power MOSFET
Features:
⢠Low Drain-to-Source On Resistance (RDS(ON))
⢠Low Total Gate Charge (QG) and Gate-to-Drain
Charge (QGD)
⢠Low Series Gate Resistance (RG)
⢠Fast Switching
⢠Capable of Short Dead-Time Operation
⢠RoHS Compliant
Applications:
⢠Point-of-Load DC-DC Converters
⢠High-Efficiency Power Management in Servers,
Networking and Automotive Applications
Package Type
PDFN 5 x 6
Description:
The MCP87018 is an N-Channel power MOSFET in a
popular PDFN 5 mm x 6 mm package. Advanced
packaging and silicon processing technologies allow
the MCP87018 to achieve a low QG for a given RDS(on)
value, resulting in a low Figure of Merit (FOM).
Combined with low RG, the low FOM of the MCP87018
allows high-efficiency power conversion with reduced
switching and conduction losses.
S1
8D
S2
7D
S3
6D
G4
5D
Product Summary Table: Unless otherwise indicated, TA = +25°C.
Parameters
Sym. Min. Typ. Max. Units
Conditions
Operating Characteristics
Drain-to-Source Breakdown Voltage
Gate-to-Source Threshold Voltage
Drain-to-Source On Resistance
Total Gate Charge
Gate-to-Drain Charge
Series Gate Resistance
BVDSS
25
â
â
VGS(TH)
1
1.3 1.6
RDS(ON) â
â
1.8 2.2
1.5 1.9
QG
â 32.5 37
QGD
â 13 â
RG
â 1.5 â
V VGS = 0V, ID = 250 µA
V VDS = VGS, ID = 250 µA
m⦠VGS = 4.5V, ID = 25A
m⦠VGS = 10V, ID = 25A
nC VDS = 12.5V, ID = 25A, VGS = 4.5V
nC VDS = 12.5V, ID = 25A
â¦â
Thermal Characteristics
Thermal Resistance Junction-to-X
RθJX
â â 55 °C/W Note 1
Thermal Resistance Junction-to-Case
RθJC
â â 1.0 °C/W Note 2
Note 1:
2:
RθJX is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1" x 1" mounting pad of 2 oz.
copper. This characteristic is dependent on userâs board design.
RθJC is determined using JEDEC 51-14 Method. This characteristic is determined by design.
ï£ 2013 Microchip Technology Inc.
DS20002329B-page 1
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