MCP87018 Datasheet, PDF (1/14 Pages) Microchip Technology – High-Speed N-Channel Power MOSFET

MCP87018
High-Speed N-Channel Power MOSFET
Features:
• Low Drain-to-Source On Resistance (R_DS(ON))
• Low Total Gate Charge (Q_G) and Gate-to-Drain
Charge (Q_GD)
• Low Series Gate Resistance (R_G)
• Fast Switching
• Capable of Short Dead-Time Operation
• RoHS Compliant
Applications:
• Point-of-Load DC-DC Converters
• High Efficiency Power Management in Servers,
Networking and Automotive Applications
Package Type
PDFN 5 x 6
Description:
The MCP87018 is an N-Channel power MOSFET in a
popular PDFN 5 mm x 6 mm package. Advanced
packaging and silicon processing technologies allow
the MCP87018 to achieve a low Q_G for a given R_DS(on)
value, resulting in a low Figure of Merit (FOM).
Combined with low R_G, the low FOM of the MCP87018
allows high efficiency power conversion with reduced
switching and conduction losses.
S1
8D
S2
7D
S3
6D
G4
5D
Product Summary Table: Unless otherwise indicated, T_A = +25°C
Parameters
Sym. Min. Typ. Max. Units
Conditions
Operating Characteristics
Drain-to-Source Breakdown Voltage
BV_DSS
25
—
—
V V_GS = 0V, I_D = 250 µA
Gate-to-Source Threshold Voltage
Drain-to-Source On Resistance
Total Gate Charge
V_GS(TH)
1
1.3 1.6
R_DS(ON) —
—
1.8 2.2
1.5 1.9
Q_G
— 32.5 37
V V_DS = V_GS, I_D = 250 µA
mΩ V_GS = 4.5V, I_D = 25A
mΩ V_GS = 10V, I_D = 25A
nC V_DS = 12.5V, I_D = 25A, V_GS = 4.5V
Gate-to-Drain Charge
Q_GD
— 13 —
nC V_DS = 12.5V, I_D = 25A
Series Gate Resistance
R_G
— 1.5 —
Ω—
Thermal Characteristics
Thermal Resistance Junction-to-X
R_θJX
— — 56 °C/W Note 1
Thermal Resistance Junction-to-Case
R_θJC
— — 1.4 °C/W Note 2
Note 1: R_θJX is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1" x 1" mounting pad of
2 oz. copper. This characteristic is dependent on user’s board design.
2: R_θJC is determined using JEDEC 51-14 Method. This characteristic is determined by design.
 2013 Microchip Technology Inc.
DS22329A-page 1