MCP6N16 Datasheet, PDF (1/58 Pages) Microchip Technology – Rail-to-Rail Input and Output

MCP6N16
Zero-Drift Instrumentation Amplifier
Features:
• High DC Precision:
- V_OS: ±17 µV (maximum, G_MIN = 100)
- TC₁: ±60 nV/°C (maximum, G_MIN = 100)
- CMRR: 112 dB (minimum, G_MIN = 100,
V_DD = 5.5V)
- PSRR: 110 dB (minimum, G_MIN = 100,
V_DD = 5.5V)
- g_E: ±0.15% (maximum, G_MIN = 10, 100)
• Flexible:
- Minimum Gain (G_MIN) Options:
1, 10 and 100 V/V
- Rail-to-Rail Input and Output
- Gain Set by Two External Resistors
• Bandwidth: 500 kHz (typical, Gain = G_MIN = 1, 10)
• Power Supply:
- V_DD: 1.8V to 5.5V
- I_Q: 1.1 mA (typical)
- Power Savings (Enable) Pin: EN
• Enhanced EMI Protection:
- Electromagnetic Interference Rejection Ratio
(EMIRR): 111 dB at 2.4 GHz
• Extended Temperature Range: -40°C to +125°C
Typical Applications:
• High-Side Current Sensor
• Wheatstone Bridge Sensors
• Difference Amplifier with Level Shifting
• Power Control Loops
Design Aids:
• SPICE Macro Model
• Microchip Advanced Part Selector (MAPS)
• Application Notes
Description:
Microchip Technology Inc. offers the single Zero-Drift
MCP6N16 instrumentation amplifier (INA) with Enable
pin (EN) and three minimum gain options (G_MIN). The
internal offset correction gives high DC precision: it has
very low offset and offset drift, and negligible 1/f noise.
Two external resistors set the gain, minimizing gain
error and drift over temperature. The reference voltage
(V_REF) shifts the output voltage (V_OUT).
The MCP6N16 is designed for single-supply operation,
with rail-to-rail input (no common mode crossover
distortion) and output performance. The supply voltage
range (1.8V to 5.5V) is low enough to support many
portable applications. All devices are fully specified
from -40°C to +125°C. Each part has EMI filters at the
input pins, for good EMI rejection (EMIRR).
These parts have three minimum gain options (1, 10
and 100 V/V). This allows the user to optimize the input
offset voltage and input noise for different applications.
Typical Application Circuit
V_DD
RTD Temperature Sensor
2.49 kΩ 10 µF
4.99 kΩ
68.1Ω
4.99 kΩ
4.99 kΩ
EN
MCP6N16-100
RTD
100Ω
100Ω
20 kΩ
100Ω
V_OUT
Package Types
MCP6N16
MSOP
MCP6N16
3×3 DFN *
EN 1
V_IM 2
V_IP 3
V_SS 4
8 V_DD
7 V_OUT
6 V_FG
5 V_REF
EN 1
8 V_DD
V_IM 2 _EP 7 V_OUT
V_IP 3
9
6 V_FG
V_SS 4
5 V_REF
* Includes Exposed Thermal Pad (EP); see Table 3-1.
 2014 Microchip Technology Inc.
DS20005318A-page 1