MCP6481 Datasheet, PDF (1/50 Pages) Microchip Technology – 4 MHz, Low-Input Bias Current Op Amps

MCP6481/2/4
4 MHz, Low-Input Bias Current Op Amps
Features
• Low-Input Bias Current
- 150 pA (typical, T_A = +125°C)
• Low Quiescent Current
- 240 µA/amplifier (typical)
• Low-Input Offset Voltage
- ±1.5 mV (maximum)
• Supply Voltage Range: 2.2V to 5.5V
• Rail-to-Rail Input/Output
• Gain Bandwidth Product: 4 MHz (typical)
• Slew Rate: 2.7 V/µs (typical)
• Unity Gain Stable
• No Phase Reversal
• Small Packages
- Singles in SC70-5, SOT-23-5
• Extended Temperature Range
- -40°C to +125°C
Applications
• Photodiode Amplifier
• pH Electrode Amplifier
• Low Leakage Amplifier
• Piezoelectric Transducer Amplifier
• Active Analog Filter
• Battery-Powered Signal Conditioning
Description
The Microchip MCP6481/2/4 family of operational
amplifiers (op amps) has low-input bias current
(150 pA, typical at 125°C) and rail-to-rail input and
output operation. This family is unity gain stable and
has a gain bandwidth product of 4 MHz (typical). These
devices operate with a single-supply voltage as low as
2.2V, while only drawing 240 µA/amplifier (typical) of
quiescent current. These features make the family of
op amps well suited for photodiode amplifier, pH
electrode amplifier, low leakage amplifier, and battery-
powered signal conditioning applications, etc.
The MCP6481/2/4 family is offered in single
(MCP6481), dual (MCP6482), quad (MCP6484)
packages. All devices are designed using an advanced
CMOS process and fully specified in extended
temperature range from -40°C to +125°C.
Related Parts
• MCP6471/2/4: 2 MHz, Low-Input Bias Current Op
Amps
• MCP6491/2/4: 7.5 MHz, Low-Input Bias Current
Op Amps
Design Aids
• SPICE Macro Models
• FilterLab^® Software
• MAPS (Microchip Advanced Part Selector)
• Analog Demonstration and Evaluation Boards
• Application Notes
Package Types
MCP6481
SC70, SOT-23
V_OUT 1
V_SS 2
V_IN+ 3
5 V_DD
4 V_IN–
MCP6482
SOIC, MSOP
V_OUTA 1
V_INA– 2
V_INA+ 3
V_SS 4
8 V_DD
7 V_OUTB
6 V_INB–
5 V_INB+
* Includes Exposed Thermal Pad (EP); see Table 3-1.
MCP6482
2x3 TDFN*
MCP6484
SOIC, TSSOP
V_OUTA 1
8 V_DD V_OUTA 1
V_INA– 2 EP 7 V_OUTB ^VINA^{– 2}
V_INA+ 3 ⁹ 6 V_INB– ^VINA^{+ 3}
V_SS 4
5 V_INB+ ^V_DD ⁴
V_INB+ 5
V_INB– 6
V_OUTB 7
14 V_OUTD
13 V_IND–
12 V_IND+
11 V_SS
10 V_INC+
9 V_INC–
8 V_OUTC
 2012-2013 Microchip Technology Inc.
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