MCP14700_13 Datasheet, PDF (1/28 Pages) Microchip Technology – Dual Input Synchronous MOSFET Driver

MCP14700
Dual Input Synchronous MOSFET Driver
Features:
• Ideally suited to drive low Figure-of-Merit (FOM)
MOSFETs such as Microchip’s MCP87000
MOSFET family
• Independent PWM Input Control for High-Side
and Low-Side Gate Drive
• Input Logic Level Threshold 3.0V TTL Compatible
• Dual Output MOSFET Drive for Synchronous
Applications
• High Peak Output Current: 2A (typical)
• Internal Bootstrap Blocking Device
• +36V BOOT Pin Maximum Rating
• Low Supply Current: 45 µA (typical)
• High Capacitive Load Drive Capability:
- 3300 pF in 10.0 ns (typical)
• Input Voltage Undervoltage Lockout Protection
• Overtemperature Protection
• Space Saving Packages:
- 8-Lead SOIC
- 8-Lead 3x3 DFN
Applications:
• 3-Phase BLDC Motor Control
• High Efficient Synchronous DC/DC Buck
Converters
• High-Current Low Output Voltage Synchronous
DC/DC Buck Converters
• High Input Voltage Synchronous DC/DC Buck
Converters
• Core Voltage Supplies for Microprocessors
General Description:
The MCP14700 is a high-speed synchronous
MOSFET driver designed to optimally drive a high-side
and low-side N-Channel MOSFET. It is particularly well
suited for driving low-FOM MOSFETs, including
Microchip’s MCP87000 family of high-speed
MOSFETs. The MCP14700 has two PWM inputs to
allow independent control of the external N-Channel
MOSFETs. Since there is no internal cross conduction
protection circuitry the external MOSFET dead time
can be tightly controlled allowing for more efficient
systems or unique motor control algorithms.
The transition thresholds for the PWM inputs are
typically 1.6V on a rising PWM input signal and typically
1.2V on a falling PWM input signal. This makes the
MCP14700 ideally suited for controllers that utilize 3.0V
TTL/CMOS logic. The PWM inputs are internally pulled
low ensuring the output drive signals are low if the
inputs are floating.
The HIGHDR and LOWDR peak source current
capability of the MCP14700 device is typically 2A.
While the HIGHDR can sink 2A peak typically, the
LOWDR can sink 3.5A peak typically. The low
resistance pull-up and pull-down drive allow the
MCP14700 to quickly transition a 3300 pF load in
typically 10 ns. Bootstrapping for the high-side drive is
internally implemented which allows for a reduced
system cost and design complexity.
The MCP14700 features undervoltage lockout (UVLO)
with a typical hysteresis of 500 mV. Overtemperature
protection with hysteresis is also featured on the
device.
Package Types
MCP14700
SOIC
PHASE 1
PWM_HI 2
PWM_LO 3
GND 4
8 HIGHDR
7 BOOT
6 V_CC
5 LOWDR
MCP14700
3x3 DFN*
PHASE 1
8 HIGHDR
PWM_HI 2 _EP 7 BOOT
PWM_LO 3 ⁹ 6 V_CC
GND 4
5 LOWDR
* Includes Exposed Thermal Pad (EP); see Table 3-1.
 2009-2013 Microchip Technology Inc.
DS22201B-page 1