DN2530 Datasheet, PDF (1/13 Pages) Supertex, Inc – N-Channel Depletion-Mode Vertical DMOS FETs

DN2530
N-Channel, Depletion-Mode, Vertical DMOS FET
Features
• High-input impedance
• Low-input capacitance
• Fast switching speeds
• Low on-resistance
• Free from secondary breakdown
• Low input and output leakage
Applications
• Normally-on switches
• Solid state relays
• Converters
• Linear amplifiers
• Constant current sources
• Power supply circuits
• Telecom
Description
The DN2530 is a low-threshold, depletion-mode, nor-
mally-on transistor that utilizes an advanced vertical
DMOS structure and a well-proven silicon-gate manu-
facturing process. This combination produces a device
with the power-handling capabilities of bipolar transis-
tors, plus the high-input impedance and positive-tem-
perature coefficient inherent in Metal-Oxide
Semiconductor (MOS) devices. Characteristic of all
MOS structures, this device is free from thermal run-
away and thermally-induced secondary breakdown.
Vertical DMOS Field-Effect Transistors (FETs) are ide-
ally suited to a wide range of switching and amplifying
applications where high breakdown-voltage, high-input
impedance, low-input capacitance, and fast switching
speeds are desired.
Package Types
SOURCE
DRAIN
GATE
TO-92
See Table 2-1 for pin information
DRAIN
SOURCE
DRAIN
GATE
TO-243AA (SOT-89)
 2016 Microchip Technology Inc.
DS20005451A-page 1