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DN2450 Datasheet, PDF (1/12 Pages) Microchip Technology – N-Channel, Depletion-Mode, Vertical DMOS FET | |||
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DN2450
N-Channel, Depletion-Mode, Vertical DMOS FET
Features
⢠High-input impedance
⢠Low-input capacitance
⢠Fast switching speeds
⢠Low on-resistance
⢠Free from secondary breakdown
⢠Low input and output leakages
Applications
⢠Normally-on switches
⢠Battery operated systems
⢠Voltage to current converters
⢠Constant current sources
⢠Current and voltage limiters
Description
This low threshold, depletion-mode, normally-on, tran-
sistor utilizes an advanced vertical Diffusion Metal
Oxide Semiconductor (DMOS) structure and a well
proven silicon-gate manufacturing process. This com-
bination produces a device with the power-handling
capabilities of bipolar transistors, plus the high-input
impedance and positive-temperature coefficient inher-
ent in Metal-Oxide Semiconductor (MOS) devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced second-
ary breakdown.
Vertical DMOS Field-Effect Transistors (FETs) are ide-
ally suited to a wide range of switching and amplifying
applications where a very low threshold voltage, high
breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
ï£ 2015 Microchip Technology Inc.
DS20005404A-page 1
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