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| 2N6661 Datasheet, PDF (1/10 Pages) Seme LAB – N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR | |||
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2N6661
N-Channel, Enhancement-Mode, Vertical DMOS FET
Features
⢠Free from secondary breakdown
⢠Low power drive requirement
⢠Ease of paralleling
⢠Low CISS and fast switching speeds
⢠Excellent thermal stability
⢠Integral source-drain diode
⢠High input impedance and high gain
Applications
⢠Motor controls
⢠Converters
⢠Amplifiers
⢠Switches
⢠Power supply circuits
⢠Drivers: relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.
Description
2N6661 is an enhancement-mode (normally-off) tran-
sistor that utilizes a vertical DMOS structure and a well-
proven silicon-gate manufacturing process. This com-
bination produces a device with the power-handling
capabilities of bipolar transistors, and the high input
impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS struc-
tures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very-
low threshold voltage, high breakdown voltage, high-
input impedance, low-input capacitance, and fast
switching speeds are desired.
Package Types
GATE
SOURCE
DRAIN
TO-39
Case: Drain
See Table 2-1 for pin information
ï£ 2016 Microchip Technology Inc.
DS20005516A-page 1
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