MLX90308CCC Datasheet, PDF (7/26 Pages) Micro Electronics – Programmable Sensor Interface

MLX90308CCC
Programmable Sensor Interface
Unique Features
Customization
Melexis can customize the MLX90308 in both
hardware and firmware for unique requirements.
The hardware design provides 64 bytes of RAM, 3
kbytes of ROM, and 48 bytes of EEPROM for use
by the firmware.
Special Information
The output of the sensor bridge is amplified via
offset and gain amplifiers and then converted to the
correct output signal form in one of the output
stages.
The sensitivity and offset of the analog signal chain
are defined by numbers passed to the DAC
interfaces from the microcontroller core (GN[9:0]
and OF[9:0]). The wide range of bridge offset and
gain is accommodated by means of a 2-bit coarse
adjustment DAC in the offset adjustment (CSOF
[1:0]), and a similar one in the gain adjustment
(CSGN[2:0]). The signal path can be directed
through the processor for digital processing. Two I/
O pins are available for analog inputs or digital
outputs. These pins can be used for alarms on
various points on the analog signal path and built-in
or external temperature values.
Programming and Setup
The MLX90308 needs to have the
compensation coefficients programmed for a
particular bridge sensor to create the sensor
system. Programming the EEPROM involves
some minimal communications interface
circuitry, Melexis’ setup software, and a PC.
The communications interface circuitry is
available in a development board. This circuitry
communicates with the PC via a standard RS-
232 serial communications port.
Cross Reference
There are no known devices which the MLX
90308CCC can replace.
ESD Precautions
Observe standard ESD control procedures for
CMOS semiconductors.
Table 2. Absolute Maximum Ratings
Supply voltage (ratiometric) V_DD Max
6V
Supply voltage (ratiometric) V_DD Min
4.5V
Supply voltage (operating), V_DD1 Max
Reverse voltage protection
35V
-0.7V
Supply current, Current Mode, I_DD
3.5mA
Supply current, Voltage Mode, I_DD
4.5mA
Output current, I_VMO
8mA
Output current (short to V_DD), I_SCVMO 100mA
Output current (short to V_SS), I_SCVMO 8mA
Output voltage, V_VMO
+11V
Power dissipation, P_D
71mW
Operating temperature range, T_A ^{-40 to +140°}
Storage temperature range, T_S
-55 to +150°C
Maximum junction temperature, T_J 150°C
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