MWB51TA-DI Datasheet, PDF (1/1 Pages) Micro Electronics – ULTRA HIGH BRIGHTNESS WHITE LED LAMP

MICRO
MWB51TA-DI
MWB51TB-DI
MWB51TK-DI
ULTRA HIGH
BRIGHTNESS
WHITE LED LAMP
DESCRIPTION
MWB51TX-DI is an ultra high brightness
InGaN/GaN white LED lamp encapsulated
in a 5mm diameter clear transparent lens .
ABSOLUTE MAXIMUM RATINGS
Power Dissipation @ Ta=25°C
Continuous Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature (1/16" from body)
125mW
30mA
5V
-20 to +80°C
-30 to +100°C
260°C for 5 sec.
ELECTRO-OPTICAL CHARACTERISTICS
(Ta=25°C)
PARAMETER
SYMBOL MIN TYP MAX UNIT CONDITIONS
Forward Voltage
VF
3.5 4.5 V
IF=20mA
Reverse Breakdown Voltage
BVR
5
V
IR=100µA
Luminous Intensity
MWB51TA-DI
IV 2500 3800
mcd
IF=20mA
MWB51TB-DI
IV 2000 3500
mcd
IF=20mA
MWB51TK-DI
IV 1000 1800
mcd
IF=20mA
Viewing Angle
MWB51TA-DI 2θ 1/2
20
degree
IF=20mA
MWB51TB-DI 2θ 1/2
30
degree
IF=20mA
MWB51TK-DI 2θ 1/2
70
degree
IF=20mA
Chromaticity Coordinates
x
0.30
IF=20mA
y
0.30
IF=20mA
CAUTION
REV：C
Static eletricity and surge damages the LED ,It is recommended to use a wrist band or anti-eletrostatic glove
when handling the LED . All devices,equipment and machinery must be properly grounded.
MICRO ELECTRONICS LTD.
7/F, Enterprise Square Three,39 Wang Chiu Road, Kowloon Bay, Kowloon, Hong Kong.
Tel : [phone] Fax: [phone] Website : www.microelectr.com.hk
15/8/2003