M2012Y Datasheet, PDF (1/2 Pages) Micro Electronics – HIGH BRIGHTNESS AMBER SURFACE LIGHTING

MICRO M2012Y
HIGH BRIGHTNESS
AMBER
SURFACE LIGHTING
FEATURES:
GaAsP/GaP Amber Chip
Amber Diffused Lens
Low Power Requirements
Wide Viewing Angle
ABSOLUTE MAXIMUM RATINGS
Power dissipation/Chip
Continuous Forward Current/Chip
Peak Forward Current/Chip
(*Pulse Width = 1ms , Duty Ratio = 1/10)
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Solder Temperature (1/16 Inch from body)
Maximum Soldering Time( ≤260°C)
(Ta=25°C)
Pd
IF
*IFP
VR
Topr
Tstg
60mW
20mA
100mA
5V
-20 to +80°C
-25 to +85°C
260℃
5 sec
ELECTRO-OPTICAL CHARACTERISTICS
(Ta=25°C)
PARAMETER
Forward Voltage/Chip
Reverse Current/Chip
Peak Wavelength
Dominant Wavelength
Spectral Line Half Width
Luminous Intensity
SYMBOL
V_F
I_R
λp
λd
Δλ
IV
MIN TYP MAX UNIT
2.1 2.8 V
100 _μA
589
nm
590
nm
35
nm
5
15
mcd
CONDITIONS
I_F=20mA
V_R=5V
I_F=20mA
I_F=20mA
I_F=20mA
I_F=10mA/Chip
16/5/2005
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