HPH2369 Datasheet, PDF (1/4 Pages) Micro Electronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6133
Issued Date : 1993.06.18
Revised Date : 2002.02.18
Page No. : 1/4
HPH2369
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HPH2369 is designed for general purpose switching and
amplifier applications.
Features
• Low Collector Saturation Voltage
• High speed switching Transistor
TO-92
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 40 V
VCES Collector to Emitter Voltage ...................................................................................... 40 V
VCEO Collector to Emitter Voltage ...................................................................................... 15 V
VEBO Emitter to Base Voltage ........................................................................................... 4.5 V
IC Collector Current ....................................................................................................... 500 mA
Characteristics (Ta=25°C)
Symbol
Min. Typ.
BVCBO
40
-
BVCEO
15
-
BVCES
40
-
BVEBO
4.5
-
ICBO
-
-
ICES
-
-
IEBO
-
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
*VCE(sat)3
-
-
*VBE(sat)1 700
-
*VBE(sat)2
-
-
*hFE1
40
80
*hFE2
20
-
fT
500
-
Cob
-
-
Max.
-
-
-
-
400
300
100
250
300
600
850
1.5
120
-
-
4
Unit
Test Conditions
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
V
MHz
pF
IC=100uA, IE=0
IC=10mA, IB=0
IC=10uA, VBE=0
IE=10uA, IC=0
VCB=20V, IE=0
VCE=25V, VBE=0
VEB=2V, IC=0
IC=10mA, IB=1mA
IC=10mA, IB=0.3mA
IC=100mA, IB=10mA
IC=10mA, IB=1mA
IC=100mA, IB=1mA
IC=10mA, VCE=1V
IC=100mA, VCE=2V
IC=10mA, VCE=10V, f=100MHZ
VCB=5V, f=1MHz, IE=0
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HPH2369
HSMC Product Specification