2SD1616A Datasheet, PDF (1/1 Pages) Micro Electronics – NPN SILICON TRANSISTOR

MICRO 2SD1616A
NPN
SILICON
TRANSISTOR
DESCRIPTION
2SD1616A is NPN silicon planar
transistor designed for use in driver and
output stages of AF amplifier, general
purpose application.
ABSOLUTE MAXIMUM RATINGS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Total Power Dissipation @ Ta=25^oC
Operating & Storage Junction Temperature
4.6
(0.18)
12.7
(0.5)
min.
4.68
(0.18)
TO-92B
3.58
(0.14) ^{B C E}
0.4
(0.016)
10
2.54
0.51
(0.1)
(0.02) _{Bottom view}
Unit: mm(inch)
0.45
(0.018)
VCEO
VCBO
VEBO
IC
Ptot
Tj,Tstg
60V
120V
6V
1A
0.65W
-55 to +150^oC
ELECTRICAL CHARACTERISTICS (Ta=25^oC)
PARAMETER
SYMBOL MIN
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
D.C. Current Gain
HFE * 170
D.C. Current Gain
HFE *
45
Base-Emitter Voltage
VBE * 600
Collector-Emitter Saturation Voltage VCE(sat) *
Base-Emitter Saturation Voltage
VBE(sat) *
Output Capacitance
Cob
19
Gain Bandwidth Product
fT
100
Turn-On Time
ton
0.07
Storage Time
tstg
0.95
Fall Time
tf
0.07
* Pulse test PW ≦ 350µs, duty cycle ≦ 2%.
MAX
100
100
350
700
0.5
1.2
TYP.
TYP.
TYP.
TYP.
UNIT
CONDITIONS
nA VCB=60V IE=0
nA VEB=6V IC=0
VCE=2V IC=100mA
VCE=2V IC=1A
mV VCE=2V IC=50mA
V IC=1A
IB=50mA
V IC=1A
IB=50mA
pF VCB=10V IE=0
MHz VCE=2V IC=100mA
µs Vcc=10V IC=100mA
µs IB1=-IB2=10mA
µs ^{VBE(off)=-2 to 3V}
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