PL602-03 Datasheet, PDF (3/4 Pages) Micrel Semiconductor – Low Phase Noise CMOS XO (48MHz to 100MHz)

3. AC Specifications
PARAMETERS
Input Crystal Frequency
Output Clock Rise/Fall Time
(Standard Drive)
Output Clock Rise/Fall Time
(High Drive)
Output Clock Duty Cycle
PL602-03
Low Phase Noise CMOS XO (48MHz to 100MHz)
SYMBOL
CONDITIONS
0.3V ~ 3.0V with 15 pF load
0.3V ~ 3.0V with 15 pF load
Measured @ 50% VDD
MIN.
12
45
TYP.
2.4
1.2
50
MAX.
25
55
UNITS
MHz
ns
%
4. Jitter and Phase Noise Specification
PARAMETERS
RMS Period Jitter
(1 sigma – 1000 samples)
Phase Noise relative to carrier
Phase Noise relative to carrier
Phase Noise relative to carrier
Phase Noise relative to carrier
Phase Noise relative to carrier
CONDITIONS
at 80MHz, with capacitive decoupling
between VDD and GND.
80MHz @100Hz offset
80MHz @1kHz offset
80MHz @10kHz offset
80MHz @100kHz offset
80MHz @1MHz offset
MIN. TYP. MAX. UNITS
20
ps
-106
dBc/Hz
-124
dBc/Hz
-130
dBc/Hz
-122
dBc/Hz
-121
dBc/Hz
5. Crystal Specifications
PARAMETERS
Crystal Resonator Frequency
Crystal Loading Capacitance Rating
Driving power
ESR
SYMBOL
F_XIN
CL _(xtal)
RS
MIN.
TYP.
MAX.
12
25
20
1
30
UNITS
MHz
pF
mW

PACKAGE INFORMATION
8 PIN ( dimensions in mm )
Symbol
A
Narrow SOIC
Min.
Max
.
1.34
1.74
TSSOP
Min.
Max
.
-
1.20
EH
A1
0.10
0.25
0.05
0.15
B
0.33
0.51
0.19
0.30
C
0.19
0.25
0.09
0.20
D
D
4.80
4.95
2.90
3.10
E
3.80
4.00
4.30
4.50
H
5.80
6.20
6.20
6.60
L
0.38
1.27
0.45
0.75
e
1.27 BSC
0.65 BSC
A1
A
C
L
B
e
Micrel Inc. • 2180 Fortune Drive • San Jose, CA 95131 • USA • tel [phone] • fax [phone] • www.micrel.com Rev 11/16/11 Page 3