MIC4423 Datasheet, PDF (3/12 Pages) Micrel Semiconductor – Dual 3A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process

MIC4423/4424/4425
Absolute Maximum Ratings (Note 1)
Supply Voltage ........................................................... +22V
Input Voltage ................................. V_S + 0.3V to GND – 5V
Junction Temperature .............................................. 150°C
Storage Temperature Range .................... –65°C to 150°C
Lead Temperature (10 sec.) ..................................... 300°C
ESD Susceptability, Note 3 ...................................... 1000V
Micrel
Operating Ratings (Note 2)
Supply Voltage (V_S) .................................... +4.5V to +18V
Temperature Range
C Version .................................................. 0°C to +70°C
B Version ............................................... –40°C to +85°C
Package Thermal Resistance
DIP θ_JA ............................................................. 130°C/W
DIP θ_JC ............................................................... 42°C/W
Wide-SOIC θ_JA ................................................. 120°C/W
Wide-SOIC θ_JC ................................................... 75°C/W
SOIC θ_JA .......................................................... 120°C/W
SOIC θ_JC ............................................................ 75°C/W
MIC4423/4424/4425 Electrical Characteristics
4.5V ≤ V_S ≤ 18V; T_A = 25°C, bold values indicate –40°C ≤ T_A ≤ +85°C; unless noted.
Symbol
Parameter
Conditions
Input
V_IH
Logic 1 Input Voltage
V_IL
Logic 0 Input Voltage
I_IN
Input Current
0V ≤ V_IN ≤ V_S
Output
V_OH
V_OL
R_O
High Output Voltage
Low Output Voltage
Output Resistance HI State
Output Resistance LO State
I_PK
Peak Output Current
I
Latch-Up Protection
Withstand Reverse Current
Switching Time (Note 4)
t_R
Rise Time
I_OUT = 10mA, V_S = 18V
V_IN = 0.8V, I_OUT = 10mA, V_S = 18V
I_OUT = 10mA, V_S = 18V
V_IN = 2.4V, I_OUT = 10mA, V_S = 18V
test Figure 1, C_L = 1800pF
t_F
Fall Time
test Figure 1, C_L = 1800pF
t_D1
Delay Tlme
test Ffigure 1, C_L = 1800pF
t_D2
Delay Time
test Figure 1, C_L = 1800pF
Power Supply
I_S
Power Supply Current
V_IN = 3.0V (both inputs)
I_S
Power Supply Current
V_IN = 0.0V (both inputs)
Min Typ Max Units
2.4
V
0.8
V
–1
1
µA
–10
10
µA
V_S–0.025
V
0.025 V
2.8
5
Ω
3.7
8
Ω
3.5
5
Ω
4.3
8
Ω
3
A
>500
mA
23
35
ns
28
60
ns
25
35
ns
32
60
ns
33
75
ns
32
100
ns
38
75
ns
38
100
ns
1.5
2.5
mA
2
3.5
mA
0.15 0.25 mA
0.2
0.3
mA
Note 1.
Note 2.
Note 3.
Note 4.
Exceeding the absolute maximum rating may damage the device.
The device is not guaranteed to function outside its operating rating.
Devices are ESD sensitive. Handling precautions recommended. ESD tested to human body model, 1.5k in series with 100pF.
Switching times guaranteed by design.
January 1999
3
MIC4423/4424/4425