IDD05SG60C_13 Datasheet, PDF (3/7 Pages) Infineon Technologies AG – 3rd Generation thinQ!TM SiC Schottky Diode

1 Power dissipation
P _tot=f(T _C); parameter: R_thJC(max)
IDD05SG60C
2 Diode forward current
I _F=f(T _C)⁴⁾; T _j≤175 °C; parameter: D = t _p/T
60
35
0.1
30
50
25
40
20
30
0.3
15
0.5
20
0.7
10 1
10
5
0
25
50
75 100 125 150 175
T_C [°C]
0
25
50
75 100 125 150 175
T_C [°C]
3 Typ. forward characteristic
I _F=f(V_F); t _p=400 µs; parameter:T _j
4 Typ. forward characteristic in surge current
mode
I _F=f(V_F); t _p=400 µs; parameter: T _j
8
30
175ºC
150ºC
7
-55ºC
150ºC
6
25ºC
100ºC
20
5
175ºC
4
-55ºC
3
25ºC
10
2
100ºC
1
0
0
1
2
3
4
V_F[V]
0
0
2
4
6
8
10
V_F[V]
Rev. 2.4
page 3
2013-02-11