MIC94001 Datasheet, PDF (2/2 Pages) Micrel Semiconductor – P-Channel MOSFET

MIC94001
Absolute Maximum Ratings
Voltage and current values are negative. Signs not shown for clarity.
Drain-to-Source Voltage ................................................ 15V
Gate-to-Source Voltage ................................................ 15V
Continuous Drain Current
T_A = 25°C ................................................................. 1.6A
T_A = 100°C .................................................................. 1A
Operating Juction Temperature ................. –55°C to +150°
Storage Temperature ............................... –55°C to +150°C
Micrel
Total Power Dissipation
T_A = 25°C ................................................................... 1W
T_A = 100°C .............................................................. 0.4W
Thermal Resistance
θ_JA ...................................................................................... 125°C/W
θ_JC ........................................................................................ 76°C/W
Lead Temperature
1/16" from case, 10s ........................................... +300°C
Electrical Characteristics T_A = 25°C unless noted. All values are negative. Signs not shown for clarity.
Symbol Parameter
Condition
Min Typ Max Units
V_BDSS
Drain-Source Breakdown Voltage V_GS = 0V, I_D = 250µA
V_GS
Gate Threshold Voltage
V_DS = V_GS, I_D = 250µA
I_GSS
Gate-Body Leakage
V_DS = 0V, V_GS = 15V, Note 2
I_DSS
Zero Gate Voltage Drain Current V_DS = 15V, V_GS = 0V
V_DS = 15V, V_GS = 0V, T_J = 125°C
I_D(ON)
On-State Drain Current
V_DS ≥ 10V, V_GS = 10V, Note 1
R_DS(ON)
Drain-Source On-State Resist.
V_GS = 4.5V, I_D = 50mA
g_FS
Forward Transconductance
V_DS = 15V, I_D = 1A, Note 1
Note 1: Pulse Test: Pulse Width ≤ 300µsec, Duty Cycle ≤ 2%
Note 2: ESD gate protection diode conducts during positive gate-to-source voltage excursions.
15
V
1
3
V
100 nA
25
µA
250
µA
5.5
A
0.35 0.40
Ω
0.7
S
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0.0
On Resistance vs.
Drain Current
V_GS = 4.5V
V_GS = 10V
0.4 0.8 1.2 1.6 2.0
I_D (A) ^{Note 1}
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0.0
Drain Characteristics
V_GS = 4.0
V_GS = 3.5
V_GS = 3.0
V_GS = 2.5
V_GS = 2.0
V_GS = 1.5
2.5 5.0 7.5 10.0 12.5 15.0
V_DS (V) Note 1
6-38
August 1998