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MIC2165 Datasheet, PDF (18/27 Pages) Micrel Semiconductor – Adaptive On-Time DC-DC Controller Featuring Hyper Light Load
Micrel, Inc.
Step 2: Add a capacitor, CS, in parallel with the
synchronous MOSFET, Q2. The capacitor value should
be approximately 2 times the COSS of Q2. Measure the
frequency of the switch node ringing, f2:
f2 =
1
(31)
2π Lp × (Cs + Cp)
Define f’ as:
f ' = f1
f2
Combining the equations for f1, f2 and f’ to derive CP, the
parasitic capacitance:
CP
=
CS
(f ' )2 −
1
(32)
LP is solved by re-arranging the equation for f1:
LP
=
(2π)2
1
× CP
× (f1)2
(33)
Step 3: Calculate the damping resistor.
Critical damping occurs at Q = 1:
Q = RS ×
CP = 1
LP
(34)
Solving for RS
RS =
LP
Cp
(35)
Figure 8 shows the snubber in the circuit and the
damped switch node waveform. The snubber capacitor,
CS, is charged and discharged each switching cycle. The
energy stored in CS is dissipated by the snubber resistor,
RS, two times per switching period. This power is
calculated in the equation below:
PSNUBBER = fSW × CS × VIN2
(36)
Ripple Injection
The VFB ripple required for proper operation of the
MIC2165 gm amplifier and error comparator is 20mV to
100mV. However, the output voltage ripple is generally
designed as 1% to 2% of the voltage. For a low output
voltage, such as a 1V output, the output voltage ripple is
only 10mV to 20mV, and the VFB ripple is less than
20mV. If the VFB ripple is so small that the gm amplifier
and error comparator cannot sense it, the MIC2165 will
lose control and the output voltage is not regulated. In
order to have some amount of VFB ripple, a ripple
injection method is applied for low output voltage ripple
applications.
The applications are divided into three situations
according to the amount of the VFB ripple:
MIC2165
1) Enough ripple at VOUT due to the large ESR of the
output capacitors.
As shown in Figure 9a, the converter is stable without
any ripple injection. The VFB ripple is:
ΔVFB(pp)
=
R2
R1+ R2
×
ΔVOUT
(37)
where ΔVOUT = ESR COUT ⋅ ΔIL(PP) , ΔIL(PP) is the peak-
to-peak value of the inductor current ripple.
2) Inadequate ripple at VOUT due to the small ESR of the
output capacitors.
The output voltage ripple is fed into the FB pin through a
feedforward capacitor Cff in this situation, as shown in
Figure 9b. The typical Cff value is between 1nF and
100nF. With the feedforward capacitor, VFB ripple is very
close to the output voltage ripple:
ΔVFB(pp) ≈ ΔVOUT
(38)
3) Virtually no ripple at VOUT due to the very low ESR of
the output capacitors.
In this situation, the output voltage ripple is less than
20mV. Therefore, additional ripple is injected into the FB
pin from the switching node SW via a resistor Rinj and a
capacitor Cinj, as shown in Figure 9c. The injected ripple
is:
ΔVFB(PP)
=
VIN
× K div
× D × (1- D) ×
1
fSW × τ
(39)
K div
=
R1//R2
Rinj + R1//R2
(40)
where:
VIN = Power stage input voltage at VIN pin
D = Duty Cycle
fSW = switching frequency
τ = (R1// R2 // Rinj ) ⋅ Cff
In equations (39) and (40), it is assumed that the time
constant associated with Cff must be much greater than
the switching period:
1 = T << 1
fSW × τ τ
If the voltage divider resistors R1 and R2 are in the kΩ
range, a Cff of 1nF to 100nF can easily satisfy the large
time constant consumption. Also, a 100nF injection
capacitor Cinj is used in order to be considered as short
for a wide range of the frequencies.
June 2010
18
M9999-060810-D