1N4448 Datasheet, PDF (1/4 Pages) Rectron Semiconductor – SIGNAL DIODE

1N4448
FAST SWITCHING DIODES
FEATURES

Silicon Epitaxial Planar Diode

Fast switching diode

This diode is also available in other
case styles including: the SOD-123
case with the type designation
1N4448W, the MiniMELF case with the
type designation LL4448, and the SOT23
case with the type designation
MECHANICAL DATA

Case: DO-35

Weight: apprax: 0.13gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified
Symbol
Value
Unit
Reverse Voltage
V_R
75
V
Peak Reverse Voltage
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at T_amb = 25 °C and f ≥ 50 Hz
V_RM
100
V
I₀
150¹⁾
mA
Surge Forward Current at t < 1 s and T_j = 25 °C
Power Dissipation at T_amb = 25 °C
I_FSM
P_tot
500
500¹⁾
mA
mW
Junction Temperature
T_j
175
°C
Storage Temperature Range
T_S
–65 to +175
°C
1) _{Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.}
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