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| MDV1525 Datasheet, PDF (5/7 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 30V, 24A, 10.1m(ohm) | |||
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10
â» Note : ID = 11A
8
6
4
2
0
0
3
6
9
12
15
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
1200
Ciss
900
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
600
300
Coss
Crss
â» Notes ;
1. VGS = 0 V
2. f = 1 MHz
0
0
5
10
15
20
25
30
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
Operation in This Area
is Limited by R DS(on)
102
10 ms
100 ms
101
1s
10s
DC
100
Single Pulse
10-1
TJ=Max rated
TC=25â
10-1
100
101
102
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
50
40
30
20
10
0
25
50
75
100
125
150
TC, Case Temperature [â]
Fig.10 Maximum Drain Current vs.
Case Temperature
101
D=0.5
0.2
100
0.1
0.05
0.02
10-1 0.01
single pulse
10-2
â» Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
10-3
10-4
10-3
10-2
10-1
100
101
102
103
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response
Curve
May. 2011. Version1.2
5
MagnaChip Semiconductor Ltd.
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