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MMD80R1K2P Datasheet, PDF (4/10 Pages) MagnaChip Semiconductor. – 800V 1.2(ohm) N-channel MOSFET
MMD80R1K2P Final Datasheet
 Reverse Diode Characteristics (Tc=25℃ unless otherwise specified)
Parameter
Continuous Diode Forward
Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Symbol Min. Typ. Max. Unit Test Condition
ISD
-
- 4.5 A
VSD
-
-
1.4
V ISD = 4.5 A, VGS = 0 V
trr
- 230 -
ns
ISD = 4.5 A
Qrr
- 1.5 -
μC di/dt = 100 A/μs
VDD = 100 V
Irrm
- 13 -
A
Dec. 2015 Revision 1.0
4
MagnaChip Semiconductor Ltd.