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| MMD60R580Q Datasheet, PDF (4/10 Pages) MagnaChip Semiconductor. – 600V 0.58(ohm) N-channel MOSFET | |||
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MMD60R580Q Datasheet
ï® Reverse Diode Characteristics (Tc=25â unless otherwise specified)
Parameter
Continuous Diode Forward
Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Symbol Min. Typ. Max. Unit Test Condition
ISD
-
-
8
A
VSD
-
-
1.4
V ISD = 8A, VGS = 0V
trr
- 259 -
ns
ISD = 8A
Qrr
-
2
-
μC di/dt = 100A/μs
VDD = 100V
Irrm
- 16 -
A
Aug. 2016 Revision 1.0
4
MagnaChip Semiconductor Ltd.
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