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MDU1515 Datasheet, PDF (4/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 30V, 57.4A, 7.2m(ohm)
◁
10
※ Note : ID = 16A
VDS = 15V
8
6
4
2
0
0
4
8
12
16
20
Q , Total Gate Charge [nC]
G
Fig.7 Gate Charge Characteristics
102
101
100
Operation in This Area
is Limited by R DS(on)
10 ms
100 ms
1s
10s
DC
10-1
Single Pulse
T =Max rated
J
TC=25℃
10-1
100
101
102
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
101
1500
1200
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
900
600
300
0
0
Coss
Crss
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
5
10
15
20
25
30
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
T , Case Temperature [℃]
A
Fig.10 Maximum Drain Current vs.
Case Temperature
101
100
D=0.5
0.2
0.1
10-1
0.05
0.02
0.01
10-2
10-3
10-4
single pulse
10-3
? Notes :
Duty Factor, D=t /t
12
PEAK T = P * Z * R (t) + T
J
DM JC JC
C
10-2
10-1
100
101
102
103
t , Rectangular Pulse Duration [sec]
1
Fig.11 Transient Thermal Response
Curve (Junction-to-Case)
Feb. 2014. Version 1.3
4
100
D=0.5
0.3
0.1
10-1
0.05
0.02
10-2 0.01
single pulse
10-3
10-4
10-3
* Notes :
Duty Factor, D=t /t
12
PEAK T = P * Z * R (t) + T
J
DM JA
JA
A
10-2
10-1
100
101
102
103
t , Rectangular Pulse Duration [sec]
1
Fig.12 Transient Thermal Response
Curve (Junction-to-Ambient)
MagnaChip Semiconductor Ltd.
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