MDS1654 Datasheet, PDF (4/6 Pages) MagnaChip Semiconductor. – Single N-Channel Trench MOSFET 30V, 15A, 9.5m(ohm)

10
※ Note : I_D = 15A
8
6
4
2
0
0
5
10
15
20
Q_G, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
10²
10¹
Operation in This Area
is Limited by R _DS(on)
10⁰
100 μs
1 ms
100 ms 10 ms
DC
Single Pulse
10^-1
T_J=Max rated
T_C=25℃
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
1700
1600
1500
1400
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
0
C_iss
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C =C
rss
gd
C_oss
C_rss
※ Notes ;
1. V_GS = 0 V
2. f = 1 MHz
10
20
30
V_DS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
15
10
5
0
25
50
75
100
125
150
T_a, Ambient Temperature [℃]
Fig.10 Maximum Drain Current vs.
Ambient Temperature
10
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
※ Notes :
Duty Factor, D=t₁/t₂
PEAK T_J = P_DM * Z_{θ JA}* R_{θ JA}(t) + T_A
R_{Θ JA}=50℃/W
single pulse
1E-3
1E-5 1E-4 1E-3 0.01
0.1
1
10
100
1000
t₁, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response
Curve
Feb. 2011. Version 1.1
4
MagnaChip Semiconductor Ltd.