MDU1721 Datasheet, PDF (3/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 40V, 100A, 1.4m(ohm)

100
90
4.0V
80
5.0V
70
6.0V
60
50
V_GS = 10V
40
3.0V
30
20
10
0
0.0
0.2
0.4
0.6
0.8
1.0
V_DS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
1.8
※ Notes :
1. V_GS = 10 V
1.6
2. I_D = 50.0 A
1.4
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75
100
125
150
T_J, Junction Temperature [^oC]
Fig.3 On-Resistance Variation with
Temperature
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0
V_GS = 10V
10 20 30 40 50 60 70 80 90 100
I_D, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
10
9
※ Notes :
I_D = 50.0A
8
7
6
5
4
3
T_A = 25℃
2
1
0
2
3
4
5
6
7
8
9
10
V_GS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
16
※ Notes :
V_DS = 10V
12
8
T_A=25℃
4
0
0
1
2
3
4
5
V_GS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
※ Notes :
100
V = 0V
GS
10
T_A=25℃
1
0.0
0.3
0.6
0.9
1.2
1.5
V , Source-Drain voltage [V]
SD
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
May. 2013. Rev. 1.0
3
MagnaChip Semiconductor Ltd.