MDU1531S Datasheet, PDF (3/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 30V

50
V_GS = 10V
8.0V
40 ^6.0V
4.5V
4.0V
30
20
3.5V
10
0
0.0
0.2
0.4
0.6
0.8
1.0
V_DS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
1.8
※ Notes :
1. V_GS = 10 V
1.6
2. I_D = 20 A
1.4
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75
100
125
150
T_J, Junction Temperature [^oC]
Fig.3 On-Resistance Variation with
Temperature
30
※ Notes :
V_DS = 5V
25
20
15
10
5
0
0
2
4
6
8
V_GS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
6
5
4
V_GS = 4.5V
3
V_GS = 10V
2
1
0
0
10
20
30
40
50
I_D, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
100
90
※ Notes :
I_D = 20.0A
80
70
60
50
40
30
20
10
0
2
3
4
5
6
7
8
9
10
V_GS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
※ Notes :
V = 0V
GS
10
1
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V_SD, Source-Drain voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
Oct. 2014. Ver. 0.1
3
MagnaChip Semiconductor Ltd.