MDP9N60 Datasheet, PDF (3/6 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 600V, 9A, 0.75(ohm)

20
V =5.5V
gs
=6.0V
=6.5V
Notes
1. 250㎲ Pulse Test
2. T_C=25℃
=7.0V
15
=8.0V
=10.0V
=15.0V
10
5
5
10
15
20
V_DS,Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
3.0
※ Notes :
1. V = 10 V
2.5
GS
2. I_D = 4.5 A
2.0
1.5
1.0
0.5
0.0
-100
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Fig.3 On-Resistance Variation with
Temperature
1.5
V_GS=10.0V
1.0
V_GS=20V
0.5
0
5
10
15
20
25
I_D,Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
1.2
※ Notes :
1. V_GS = 0 V
2. 250 s Pulse Test
1.1
1.0
0.9
0.8
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Fig.4 Breakdown Voltage Variation vs.
Temperature
* Notes ;
1. V_DS=30V
10
150℃ _25℃
-55℃
1
※ Notes :
1. V = 0 V
GS
2. I_D = 250㎂
10
150℃
25℃
1
0.1
2
4
6
8
10
V_GS [V]
Fig.5 Transfer Characteristics
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V_SD, Source-Drain Voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
Dec. 2014 Version 2.2
3
MagnaChip Semiconductor Ltd.