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MMD80R900PC Datasheet, PDF (2/10 Pages) MagnaChip Semiconductor. – 800V 0.9(ohm) N-channel MOSFET
MMD80R900PC Datasheet
 Absolute Maximum Rating (Tc=25℃ unless otherwise specified)
Parameter
Drain – Source voltage
Gate – Source voltage
Continuous drain current
Pulsed drain current(1)
Power dissipation
Single - pulse avalanche energy
MOSFET dv/dt ruggedness
Diode dv/dt ruggedness
Storage temperature
Maximum operating junction
temperature
1) Pulse width tP limited by Tj,max
2) ISD ≤ ID, VDS peak ≤ V(BR)DSS
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
dv/dt
dv/dt
Tstg
Tj
Rating
800
±30
6.0
3.8
18
75.8
230
50
15
-55 ~150
150
Unit
V
V
A
A
A
W
mJ
V/ns
V/ns
℃
℃
Note
TC=25℃
TC=100℃
 Thermal Characteristics
Parameter
Thermal resistance, junction-case max
Thermal resistance, junction-ambient max
Symbol
Rthjc
Rthja
Value
1.65
62.5
Unit
℃/W
℃/W
Mar. 2014 Revision 1.0
2
MagnaChip Semiconductor Ltd.