MMD70R900P Datasheet, PDF (2/10 Pages) MagnaChip Semiconductor. – 700V 0.9(ohm) N-channel MOSFET

MMD70R900P Datasheet
 Absolute Maximum Rating (T_c=25℃ unless otherwise specified)
Parameter
Symbol
Rating
Unit Note
Drain – Source voltage
Gate – Source voltage
Continuous drain current
Pulsed drain current⁽¹⁾
Power dissipation
Single - pulse avalanche energy
MOSFET dv/dt ruggedness
V_DSS
V_GSS
I_D
I_DM
P_D
E_AS
dv/dt
700
V
±30
V
5
A
T_C=25℃
3
A
T_C=100℃
15
A
40
W
50
mJ
50
V/ns
Diode dv/dt ruggedness
Storage temperature
Maximum operating junction
temperature
1) Pulse width tP limited by Tj,max
2) ISD ≤ ID, VDS peak ≤ V(BR)DSS
dv/dt
T_stg
T_j
15
-55 ~150
150
V/ns
℃
℃
 Thermal Characteristics
Parameter
Thermal resistance, junction-case max
Thermal resistance, junction-ambient max
Symbol
R_thjc
R_thja
Value
3.1
62.5
Unit
℃/W
℃/W
Jun. 2013 Revision 1.1
2
MagnaChip Semiconductor Ltd.