MMD60R900P Datasheet, PDF (2/10 Pages) MagnaChip Semiconductor. – 600V 0.9(ohm) N-channel MOSFET

MMD60R900P Datasheet
 Absolute Maximum Rating (T_c=25℃ unless otherwise specified)
Parameter
Symbol
Rating
Unit Note
Drain – Source voltage
Gate – Source voltage
Continuous drain current
Pulsed drain current⁽¹⁾
Power dissipation
Single - pulse avalanche energy
MOSFET dv/dt ruggedness
V_DSS
V_GSS
I_D
I_DM
P_D
E_AS
dv/dt
600
±30
4.5
2.7
13.5
38
46
50
V
V
A
A
A
W
mJ
V/ns
T_C=25℃
T_C=100℃
Diode dv/dt ruggedness
Storage temperature
Maximum operating junction
temperature
1) Pulse width tP limited by Tj,max
2) ISD ≤ ID, VDS peak ≤ V(BR)DSS
dv/dt
T_stg
T_j
15
-55 ~150
150
V/ns
℃
℃
 Thermal Characteristics
Parameter
Thermal resistance, junction-case max
Thermal resistance, junction-ambient max
Symbol
R_thjc
R_thja
Value
3.25
62.5
Unit
℃/W
℃/W
Jul. 2013 Revision 1.0
2
MagnaChip Semiconductor Ltd.