MDS1524 Datasheet, PDF (2/5 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 30V, 19.3A, 8.1m(ohm)

Ordering Information
Part Number
MDS1524URH
Temp. Range
-55~150^oC
Package
SOIC-8
Packing
Tape & Reel
Quantity
3000 units
Rohs Status
Halogen Free
Electrical Characteristics (T_J = 25^oC)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Symbol
BVDSS
VGS(th)
IDSS
IGSS
Drain-Source ON Resistance
RDS(ON)
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Resistance
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
gfs
Qg(10V)
Qg(4.5V)
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
td(off)
tf
Rg
VSD
trr
Qrr
Test Condition
ID = 250µA, VGS = 0V
VDS = VGS, ID = 250µA
VDS = 30V, VGS = 0V
TJ=55^oC
VGS = ±20V, VDS = 0V
VGS = 10V, ID = 10A
TJ=125^oC
VGS = 4.5V, ID = 8A
VDS = 5V, ID = 10A
VDS = 15.0V, ID = 10A,
VGS = 10V
VDS = 15.0V, VGS = 0V,
f = 1.0MHz
VGS = 10V, VDS = 15.0V,
ID = 10A, RG = 3.0Ω
f=1 MHz
IS = 10A, VGS = 0V
IF = 10A, dl/dt = 100A/µs
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7)
2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 19.2A, VDD = 27V, VGS = 10V.
3. T < 10sec
Min Typ
Max Unit
30
-
-
V
1.3
1.9
2.7
-
-
1
-
-
5
µA
-
-
±0.1
-
7.0
8.1
-
10.2
11.7
mΩ
-
9.7
11.6
-
29
-
S
11.4 16.2
21.1
5.5
7.8
10.1
nC
-
3.1
-
-
2.7
-
712 1017 1322
71
101
131
pF
143
205
266
-
7.2
-
-
4.7
-
ns
-
25.4
-
-
6.1
-
0.5
1.1
3.0
Ω
-
0.82
1.1
V
-
20.7
31.1
ns
-
11.4
17.1
nC
June. 2011. Version1.2
2
MagnaChip Semiconductor Ltd.