MMIS70R900P Datasheet, PDF (1/10 Pages) MagnaChip Semiconductor. – 700V 0.9(ohm) N-channel MOSFET

MMIS70R900P Datasheet
MMIS70R900P
700V 0.9Ω N-channel MOSFET
 Description
MMIS70R900P is power MOSFET using magnachip’s advanced super junction technology that
can realize very low on-resistance and gate charge. It will provide much high efficiency by using
optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to
designers as well as low switching loss.
 Key Parameters
Parameter
V_DS @ T_j,max
R_DS(on),max
V_TH,typ
I_D
Q_g,typ
Value
750
0.9
3
5
15
Unit
V
Ω
V
A
nC
 Package & Internal Circuit
D
G
DS
G
S
 Features
 Low Power Loss by High Speed Switching and Low On-Resistance
 100% Avalanche Tested
 Green Package – Pb Free Plating, Halogen Free
 Applications
 PFC Power Supply Stages
 Switching Applications
 Adapter
 Motor Control
 DC – DC Converters
 Ordering Information
Order Code
Marking
MMIS70R900PTH 70R900P
Temp. Range
-55 ~ 150℃
Package
TO-251-VS
(IPAK-VS)
Packing
Tube
RoHS Status
Halogen Free
Mar. 2016 Revision 1.3
1
MagnaChip Semiconductor Ltd.