MMIS70H900Q Datasheet, PDF (1/9 Pages) MagnaChip Semiconductor. – 700V 1.4(ohm) N-channel MOSFET

MMIS70H900Q Datasheet
MMIS70H900Q
700V 1.4Ω N-channel MOSFET
 Description
MMIS70H900Q is power MOSFET using magnachip’s advanced super junction technology that
can realize very low on-resistance and gate charge. It will provide much high efficiency by using
optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to
designers as well as low switching loss.
 Key Parameters
Parameter
V_DS @ T_j,max
R_DS(on),max
V_TH,typ
I_D
Q_g,typ
Value
750
1.4
3
3.2
8
Unit
V
Ω
V
A
nC
 Package & Internal Circuit
D
G
DS
G
S
 Features
 Low Power Loss by High Speed Switching and Low On-Resistance
 100% Avalanche Tested
 Green Package – Pb Free Plating, Halogen Free
 Applications
 PFC Power Supply Stages
 Switching Applications
 Adapter
 Motor Control
 DC – DC Converters
 Ordering Information
Order Code
MMIS70H900QTH
Marking
70H900Q
Temp. Range
-55 ~ 150℃
Package
TO-251-VS
Packing
Tube
RoHS Status
Halogen Free
Nov. 2015 Revision 1.1
1
MagnaChip Semiconductor Ltd.