MMIS60R900P Datasheet, PDF (1/11 Pages) MagnaChip Semiconductor. – 600V 0.9(ohm) N-channel MOSFET

MMIS60R900P Datasheet
MMIS60R900P
600V 0.9Ω N-channel MOSFET
 Description
MMIS60R900P is power MOSFET using magnachip’s advanced super junction technology that
can realize very low on-resistance and gate charge. It will provide much high efficiency by using
optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to
designers as well as low switching loss.
 Key Parameters
Parameter
V_DS @ T_j,max
R_DS(on),max
V_TH,typ
I_D
Q_g,typ
Value
650
0.9
3
4.5
12.3
Unit
V
Ω
V
A
nC
 Package & Internal Circuit
D
G
DS
G
S
 Features
 Low Power Loss by High Speed Switching and Low On-Resistance
 100% Avalanche Tested
 Green Package – Pb Free Plating, Halogen Free
 Applications
 PFC Power Supply Stages
 Switching Applications
 Adapter
 Motor Control
 DC – DC Converters
 Ordering Information
Order Code
Marking
MMIS60R900PTH 60R900P
Temp. Range
-55 ~ 150℃
Package
TO-251-VS
(IPAK-VS)
Packing
Tube
RoHS Status
Halogen Free
May. 2016 Revision 1.1
1
MagnaChip Semiconductor Ltd.