MMD60R580PB Datasheet, PDF (1/10 Pages) MagnaChip Semiconductor. – 600V 0.58(ohm) N-channel MOSFET

MMD60R580PB Datasheet
MMD60R580PB
600V 0.58Ω N-channel MOSFET
 Description
MMD60R580PB is power MOSFET using magnachip’s advanced super junction technology that
can realize very low on-resistance and gate charge. It will provide much high efficiency by using
optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to
designers as well as low switching loss.
 Key Parameters
Parameter
V_DS @ T_j,max
R_DS(on),max
V_TH,typ
I_D
Q_g,typ
Value
650
0.58
3
8
18
Unit
V
Ω
V
A
nC
 Package & Internal Circuit
D
G
G
D
S
 Features
 Low Power Loss by High Speed Switching and Low On-Resistance
 100% Avalanche Tested
 Green Package – Pb Free Plating, Halogen Free
 Applications
 PFC Power Supply Stages
 Switching Applications
 Adapter
 Motor Control
 DC – DC Converters
 Ordering Information
Order Code
Marking Temp. Range
Package
Packing RoHS Status
MMD60R580PBRH 60R580P_● -55 ~ 150℃ D-PAK (TO-252) Reel & Tape Halogen Free
Apr. 2014 Revision 1.0
1
MagnaChip Semiconductor Ltd.