MDV3605 Datasheet, PDF (1/6 Pages) MagnaChip Semiconductor. – Single P-Channel Trench MOSFET, -30V, -20A, 18.0m(ohm)

MDV3605
Single P-Channel Trench MOSFET, -30V, -20A, 18.0mΩ
General Description
The MDV3605 uses advanced MagnaChip’s MOSFET
Technology to provide low on-state resistance.
This device is suited for Power Management and load
switching applications common in Notebook Computers
and Portable Battery Packs.
DD DD
DD DD
Features
 VDS = -30V
 ID = -20A @VGS = -10V

RDS(ON)
< 18.0mΩ @VGS = -10V
< 33.0mΩ @VGS = -4.5V
Applications
 Load Switch
 General purpose applications
 Smart Module for Note PC Battery
D
G
S SSG
GS SS
PDFN33
S
Absolute Maximum Ratings (T_a =25^oC unless otherwise noted)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current ⁽¹⁾
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy ⁽²⁾
Junction and Storage Temperature Range
TC=25 ^oC (Package limited)
TC=25 ^oC (Silicon limited)
TC=70 ^oC (Silicon limited)
TA=25^oC
TA=70^oC
TC=25^oC
TC=70^oC
TA=25^oC
TA=70^oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
-30
±25
-20.0
-29.0
-24.0
-10.8⁽³⁾
-8.8
-80.0
25.0
16
3.4⁽³⁾
2.2
60.5
-55~150
Unit
V
V
A
A
W
mJ
o_C
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Aug. 2015. Version 1.2
(Note 1)
1
Symbol
RθJA
RθJC
Rating
36
5.0
Unit
o_C/W
MagnaChip Semiconductor Ltd.