MDV1527 Datasheet, PDF (1/7 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 30V, 20A, 15.9m(ohm)

MDV1527
Single N-channel Trench MOSFET 30V, 20A, 15.9mΩ
General Description
The MDV1527 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDV1527 is suitable for DC/DC converter and
general purpose applications.
Features
VDS = 30V
ID = 20A @VGS = 10V
RDS(ON)
< 15.9mΩ @VGS = 10V
< 23.7mΩ @VGS = 4.5V
100% UIL Tested
100% Rg Tested
D
DD DD
DD DD
S SSG
GS SS
PDFN33
Absolute Maximum Ratings (Ta = 25^oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current ⁽¹⁾
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy ⁽²⁾
Junction and Storage Temperature Range
TC=25^oC (Silicon limited)
TC=25^oC (Package limited)
TC=70^oC
TA=25^oC
TA=70^oC
TC=25^oC
TC=70^oC
TA=25^oC
TA=70^oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient ⁽¹⁾
Thermal Resistance, Junction-to-Case
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
30
±20
29.0
20
20
11.0⁽³⁾
8.8⁽³⁾
60
23.5
15.0
3.4⁽³⁾
2.2⁽³⁾
23
-55~150
Unit
V
V
A
A
W
mJ
o_C
Symbol
RθJA
RθJC
Rating
36
5.3
Unit
o_C/W
May. 2011. Version1.2
1
MagnaChip Semiconductor Ltd.