MDU1535 Datasheet, PDF (1/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 30V

MDU1535
Single N-channel Trench MOSFET 30V
General Description
The MDU1535 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDU1535 is suitable device for DC/DC Converter
and general purpose applications.
Features
 VDS = 30V
 ID = 32A @VGS = 10V

RDS(ON)
< 8.0 mΩ @VGS = 10V
< 10.5 mΩ @VGS = 4.5V
 100% UIL Tested
 100% Rg Tested
DD DD
DD DD
D
S SSG
GS SS
PDFN56
G
S
Absolute Maximum Ratings (Ta = 25^oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current ⁽¹⁾
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy ⁽²⁾
Junction and Storage Temperature Range
TC=25^oC (Silicon Limited)
TC=25^oC (Package Limited)
TA=25^oC
TA=70^oC
TC=25^oC
TA=25^oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
Unit
30
V
±20
V
53
32
20
A
17
120
36
W
5.5
61
mJ
-55~150
o_C
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient ⁽¹⁾
Thermal Resistance, Junction-to-Case
May. 2014. Ver. 0.0
Symbol
RθJA
RθJC
Rating
22.7
3.4
Unit
o_C/W
1
MagnaChip Semiconductor Ltd.