MDU1532S Datasheet, PDF (1/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 30V

7.9
MDU1532S
Single N-channel Trench MOSFET 30V
General Description
The MDU1532S uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDU1532S is suitable device for DC/DC
Converter and general purpose applications.
DD DD
DD DD
Features
 VDS = 30V
 ID = 32A @VGS = 10V

RDS(ON)
< 4.2 mΩ @VGS = 10V
< 5.3 mΩ @VGS = 4.5V
 100% UIL Tested
 100% Rg Tested
 SBD Built In
D
S SSG
GS SS
G
PDFN56
Absolute Maximum Ratings (Ta = 25^oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current ⁽¹⁾
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy ⁽²⁾
Junction and Storage Temperature Range
TC=25^oC (Silicon Limited)
TC=25^oC (Package Limited)
TA=25^oC
TA=70^oC
TC=25^oC
TA=25^oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient ⁽¹⁾
Thermal Resistance, Junction-to-Case
Symbol
RθJA
RθJC
Aug. 2014. Ver. 0.1
1
S
Rating
Unit
30
V
±20
V
105
32
29.5
A
23.7
128
69
W
5.5
20
mJ
-55~150
o_C
Rating
22.7
1.8
Unit
o_C/W
MagnaChip Semiconductor Ltd.