MDP06N033 Datasheet, PDF (1/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 60V, 120A, 3.3m(ohm)

MDP06N033
Single N-channel Trench MOSFET 60V, 120A, 3.3mΩ
General Description
The MDP06N033 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDP06N033 is suitable device for Synchronous
Rectification for Server / Adapter and general purpose
applications.
Features
 VDS = 60V
 ID = 120A @VGS = 10V

RDS(ON)
< 3.3 mΩ @VGS = 10V
 100% UIL Tested
 100% Rg Tested
D
TO-220
Absolute Maximum Ratings (Ta = 25^oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ⁽¹⁾
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy
TC=25^oC (Silicon Limited)
TC=25^oC (Package Limited)
TC=100^oC
TC=25^oC
TC=100^oC
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient ⁽¹⁾
Thermal Resistance, Junction-to-Case
Jun. 2015. Rev. 1.0
1
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
Unit
60
V
±20
V
159.8
120.0
A
101.1
480
138.9
W
55.6
288
mJ
-55~150
o_C
Symbol
RθJA
RθJC
Rating
62.5
0.9
Unit
o_C/W
MagnaChip Semiconductor Ltd.