MBQ60T65PES Datasheet, PDF (1/8 Pages) MagnaChip Semiconductor. – High Speed Fieldstop Trench IGBT Second Generation

MBQ60T65PES
High Speed Fieldstop Trench IGBT
Second Generation
General Description
This IGBT is produced using advanced MagnaChip’s Field
Stop Trench IGBT 2^nd Generation Technology, which is not only
the highest efficiency capable of switching behavior, but also it
is high ruggedness and excellent quality for solar inverter, UPS,
IH, welder and PFC application where low conduction losses
are essential
Features
 High Speed Switching & Low Power Loss
 VCE(sat) = 1.85V @ IC = 60A
 Eoff = 0.53mJ @ TC = 25°C
 High Input Impedance
 trr = 110ns (typ.) @diF/dt = 500A/ μs
 Maximum Junction Temperature 175°C
Applications
 PFC
 UPS
 PV Inverter
 Welder
 IH Cooker
TO-247
G
C
E
Maximum Rating
Parameter
Collector-emitter voltage
DC collector current, limited by Tvjmax
TC=25°C
TC=100°C
Pulsed collector current, tp limited by Tvjmax
Turn off safe operating area VCE ≤ 650V, Tvj ≤ 175°C
Diode forward current limited by Tvjmax
TC=25°C
TC=100°C
Diode pulsed current, tp limited by Tvjmax
Gate-emitter voltage
Power dissipation
TC=25°C
TC=100°C
Short circuit withstand time
VCC ≤ 400V, RG = 7Ω, VGE = 15V, Tvj = 150°C
Operating Junction temperature range
Storage temperature range
Soldering temperature
Wave soldering 1.6 mm (0.063 in.) from case for 10s
Mounting torque, M3 screw
Maximum of mounting processes: 3
Thermal Characteristic
Parameter
Thermal resistance junction-to-ambient
Thermal resistance junction-to-case for IGBT
Thermal resistance junction-to-case for Diode
Nov. 2015 Revision 0.0
1
Symbol
VCE
IC
ICp
-
IF
IFp
VGE
PD
tsc
Tvj
Tstg
M
Symbol
RθJA
RθJC
RθJC
Rating
650
100
60
180
180
60
30
200
±20
428
214
5
-40~175
-55~150
260
0.6
Unit
V
A
A
A
A
A
A
V
W
W
μs
°C
°C
°C
Nm
Rating
40
0.35
1.2
Unit
°C/W
MagnaChip Semiconductor Ltd.