MBQ40T65FESC Datasheet, PDF (1/8 Pages) MagnaChip Semiconductor. – 650V Field Stop IGBT

General Description
This IGBT is produced using advanced MagnaChip’s Field
Stop Trench IGBT Technology, which provides high switching
series and excellent quality.
This device is for PFC, UPS & Inverter applications.
TO-247
MBQ40T65FESC
650V Field Stop IGBT
Features
 High Speed Switching & Low Power Loss
 VCE(sat) = 1.95V @ IC = 40A
 Eoff = 0.3mJ @ TC = 25°C
 High Input Impedance
 trr = 80ns (typ.) @diF/dt = 1000A/ μs
 Maximum junction temperature 175°C
Applications
 PFC
 UPS
 PV Inverter
 Welder
 IH Cooker
G
C
E
Maximum Rating
Parameter
Collector-emitter voltage
DC collector current, limited by Tvjmax
TC=25°C
TC=100°C
Pulsed collector current, tp limited by Tjvjmax
Turn off safe operating area VCE ≤ 600V, Tvj ≤ 175°C
Diode forward current limited by Tvjmax
TC=25°C
TC=100°C
Diode pulsed current, tp limited by Tvjmax
Gate-emitter voltage
Power dissipation
Short circuit withstand time
VCC ≤ 400V, VGE = 15V, Tvj = 150°C
Allowed number of short circuits < 1000
Time between short circuits ≥ 1.0s
TC=25°C
TC=100°C
Operating Junction temperature range
Storage temperature range
Soldering temperature
Wave soldering 1.6 mm (0.063 in.) from case for 10s
Mounting torque, M3 screw
Maximum of mounting processes: 3
Thermal Characteristic
Parameter
Thermal resistance junction-to-ambient
Thermal resistance junction-to-case for IGBT
Thermal resistance junction-to-case for Diode
Sep. 2015 Revision 0.0
1
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
PD
tsc
Tvj
Tstg
M
Symbol
RθJA
RθJC
RθJC
Rating
650
80
40
160
160
40
20
160
±20
341
170
5
-40~175
-55~150
260
0.6
Unit
V
A
A
A
A
A
A
V
W
W
μs
°C
°C
°C
Nm
Rating
40
0.44
1.2
Unit
°C/W
MagnaChip Semiconductor Ltd.